발행물
컨퍼런스
NANO KOREA 2023 Symposium
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Implementation of Reliable Memcapacitor Synapse Device ia Ge/high-k Interface Treatment
MoS2/ZrO2-x Heterostructured Memtransistor for Reliable Heterosynaptic Plasticity
Low-Powered Switching of HfO2/InGaZnO Double-Layered Transistor with Two-Dimensional Electron Channel
High Electrical Stability of the InGaZnO Field Effect Transistor with Buried Gate Structure
Compound Semiconductor Week 2023
Strategy to implement the synaptic devices with heterosynaptic plasticity