,

Tunable Resistive Switching based on Sulfur Vacancy Engineering of Polycrystalline MoS2

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N-MoS2/p-Si Heterojunction with Graphene Interlayer for High-Performance IR Photodetector

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Highly Stable InGaZnO Field Effect Transistor with Buried-Gate Structure

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Outstanding Optical Performance of NbS2/n-MoS2/p-Si Heterostructured Photodiode via One-Step CVD Process

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Color Design of Multi-layer Oxide pigments - Using an Essential Macleod Program