,

Fabrication Optimization of Plate-Shaped SiO2 Flake for High Chroma Pearl Pigments

,

Extraordinary Switching Characteristics of Two-Dimensional Electron Channel Confined in a HfO2/InGaZnO Interface

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Gate-tunable resistive switching characteristics of O2 plasma-treated polycrystalline MoS2

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Promising applications of 2D MoS2 based heterostructure: photodetector and memtransistor

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InGaZnO Field Effect Transistor with Two-Dimensional Electron Channel Enabled by HfO2 Passivation