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전체 논문

120

31

Bundling effect of semiconductor-enriched single-walled carbon nanotube networks on field-effect transistor performance
Juyeon Seo, Seung Hun Park, Jianlin Li, Sanghyun Hong, 김영래, Hak Soo Choi, Yung Joon Jung, 조병진
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 202503

32

Improving bias stability of IGZO field-effect transistors through CF4 plasma treatment of Al2O3 dielectrics
박우진, 박현기, 조은정, 서원덕, 김민정, 권오준, 오세영, 조병진
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 202501

33

Photo-Assisted Ferroelectric Domain Control for α-In2Se3 Artificial Synapses Inspired by Spontaneous Internal Electric Fields
조병진, Kang Seok-Ju, Jung Wonzee, Gwon Oh Hun, 김한슬, Byun Hye Ryung, Kim Jong Yun, Jang Seo Gyun, Shin Beomkyu, 권오준, Yim Kanghoon, Yu Young-Jun
SMALL, 202405

34

Designing buried-gate InGaZnO transistors for high-yield and reliable switching characteristics
조병진, 김도형, 오세영, 권오준, 정수홍, 서현영, 조은정, 김민정, 서원덕, 권정대, 김용훈, 박우진
JOURNAL OF MATERIALS CHEMISTRY C, 202404

35

Reliable synaptic plasticity of InGaZnO transistor with TiO2 interlayer
조병진, 정수홍, 오세영, 권오준, 김도형, 서현영, 박우진
NANOTECHNOLOGY, 202403

36

Light-stimulated long-term potentiation behavior enhanced in a HfO2/ InGaZnO photonic synapse
조병진, 오세영, 권오준, 서현영, 김도형, 정수홍, 박현기, 박우진
APPLIED MATERIALS TODAY, 202310

37

Increased Mobility and Reduced Hysteresis of MoS<sub>2</sub> Field-Effect Transistors via Direct Surface Precipitation of CsPbBr<sub>3</sub>-Nanoclusters for Charge Transfer Doping
조병진, 이현석, 최지훈, 강예지, 안광휘, 전민기, 신소정, 김수진, 최민, 이재백, 김태연, RAHMAN IKHWAN NUR, 서현영, 오세영
NANO LETTERS, 202309

38

Reinforcing Synaptic Plasticity of Defect-Tolerant States in Alloyed 2D Artificial Transistors
조병진, 백지나, 김승규, 박규민, 윤지찬, 양민오, 김운정, Hideo Hosono, 유보림, 권오준, 박상원, 함명관, 이문상, 박지향
ACS APPLIED MATERIALS & INTERFACES, 202308

39

Conduction Mechanism in Acceptor- or Donor-Doped ZrO2 Bulk and Thin Films
조병진, 김민석, 오세영, 주종훈
ACS APPLIED MATERIALS & INTERFACES, 202307

40

Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D2 and N2 Annealing
조병진, 박준영, 배학렬, 구자윤, 이광선, 정대한, 왕동현, 오세영, 이기영
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 202306