발행물
컨퍼런스
Kyoto
,
Transport Properties of Silicon Nanowire Field Effect Transistor Test Structures Fabricated by Top-Down Approaches
IEEE
Silicon nanowire field-effect transistors with Schottky barrier source/drain contacts by top-down approach
Cork, Ireland
Reverse Short Channel Effects in High-k Gated MOSFETs
TMS
Ferroelectric thin films on Silicon Carbide for Next Generation Nonvolatile Memory and Sensor Devices [Invited]
Characteristics of PZT/Al2O3 stack on SiC demonstrated in a NVFET