발행물
컨퍼런스
IEEE
,
Multifunction Integration of Junction-MOSFETs and Nonvolatile FETs on a Single 4H-SiC Substrate for 300˚C Operation
MRS
Challenges for High Temperature Silicon Carbide Electronics
Towards ferroelectric field effect transistors in 4H-silicon carbide [invited]
Static and dynamic characteristics of junction field effect transistors in 4H silicon carbide
SiC device technology for high voltage and RF power applications