발행물
컨퍼런스
International Conference on Silicion Carbide and Related Materials
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Mixed-Mode Simulations of Transient Characteristics of 4H-SiC DMOSFETs
International Conference on Silicon Carbide and Related Materials
Nanoscale Oxidation of 4H-SiC using and Atomic Force Microscopy
International conference on silicon carbide and related materials 2009
Nanoscale Oxidation of 4H-SiC using an Atomic Force Microscopy
Thin Film Transistors with ZnO Channel Grown on 4H-SiC
Mixed-mode Simulation of Transient Characteristics of 4H-SiC DMOSFETs - Impact of Channel Length and Interface Charges