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115

101

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode
Han, JH (Han, Jeong Hwan), Han, S (Han, Sora), Lee, W (Lee, Woongkyu), Lee, SW (Lee, Sang Woon), Kim, SK (Kim, Seong Keun), Gatineau, J (Gatineau, Julien), Dussarrat, C (Dussarrat, Chris, Hwang, CS (Hwang, Cheol Seong)
APPLIED PHYSICS LETTERS, 2011

102

The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application
Minha Seo, Sang Ho Rha, Seong Keun Kim, Jeong Hwan Han, Woongkyu Lee, Sora Han, Cheol Seong Hwang
Journal of Applied Physics, 2011

103

Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes
Hudec, B (Hudec, Boris), Husekova, K (Husekova, Kristin, Tarre, A (Tarre, Aivar), Han, JH (Han, Jeong Hwan), Han, S (Han, Sora), Rosova, A (Rosova, Alica), Lee, W (Lee, Woongkyu), Kasikov, A (Kasikov, Aarne), Song, SJ (Song, Seul Ji), Aarik, J (Aarik, Jaan), Hwang, CS (Hwang, Cheol Seong), Frohlich, K (Froehlich, Karol)
MICROELECTRONIC ENGINEERING, 2011

104

Atomic layer deposition of SrTiO3 thin films with highly enhanced growth rate for ultrahigh density capacitors
Sang Woon Lee, Jeong Hwan Han, Sora Han, Woongkyu Lee, Jae Hyuck Jang, Minha Seo, Seong Keun Kim, C. Dussarrat, J. Gatineau, Yo-Sep Min, Cheol Seong Hwang
Chemistry of Materials, 2011

105

Role of interfacial reaction in atomic layer deposition of TiO2 thin films using Ti(O- i Pr)2(tmhd)2 on Ru or RuO 2 substrates
Sang Woon Lee, Jeong Hwan Han, Seong Keun Kim, Sora Han, Woongkyu Lee, Cheol Seong Hwang
Chemistry of Materials, 2011

106

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode
Jeong Hwan Han, Sora Han, Woongkyu Lee, Sang Woon Lee, Seong Keun Kim, Julien Gatineau, Christian Dussarrat, Cheol Seong Hwang
Appl. Phys. Lett., 2011

107

Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents
Seong Keun Kim, Sora Han, Jeong Hwan Han, Woongkyu Lee, Cheol Seong Hwang
Phys. Status Solidi RRL, 2011

108

Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes
Boris Hudec, Kristína Hušeková, Aivar Tarre, Jeong Hwan Han, Sora Han, Alica Rosová, Woongkyu Lee, Aarne Kasikov, Seul Ji Song, Jaan Aarik, Cheol Seong Hwang, Karol Fröhlich
Microelectron. Eng., 2011

109

Atomic layer deposition of SrTiO3 thin films with highly enhanced growth rate for ultrahigh density capacitors
Sang Woon Lee, Jeong Hwan Han, Sora Han, Woongkyu Lee, Jae Hyuck Jang, Minha Seo, Seong Keun Kim, Christian Dussarrat, Julien Gatineau, Yo-Sep Min, Cheol Seong Hwang
Chem. Mater., 2011

110

Role of interfacial reaction in atomic layer deposition of TiO2 thin films using Ti(O-iPr)2(tmhd)2 on Ru or RuO2 substrates
Sang Woon Lee, Jeong Hwan Han, Seong Keun Kim, Sora Han, Woongkyu Lee, Cheol Seong Hwang
Chem. Mater., 2011