발행물

전체 논문

246

231

MOCVD 법으로 성장한 초격자 구조의 x-선 이결정법에 의한 해석
김용, 0, 0, 0
응용물리, 1988

232

X-선 회절 방법에 의한 AlGaAs, InGaAs 의 AlAs, InAs 조성결정
김용, 0, 0, 0, 0, 0
응용물리, 1988

233

ANOMALOUS CONDUCTION-BAND DENSITY OF STATES IN ALXGA1-XAS ALLOYS
KIM, Y, KIM, MS, MIN, SK
SOLID STATE COMMUNICATIONS, 1988

234

STRUCTURAL-PROPERTIES OF GAAS GROWN ON (100) SI SUBSTRATES BY MOCVD
KIM, HS, KIM, Y, KIM, MS, MIN, SK
JOURNAL OF CRYSTAL GROWTH, 1988

235

Effective surface modification of a germanium layer by using an atmospheric pressure plasma jet with a round ended nozzle
김용, 김민, 김민규, 김성래, 조혜민, 김형수, 최정규, 정하윤, 정태훈
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013

236

Bi 를 촉매로 저온에서 성장한 CdS 나노선에 관한 연구
김용, 윤현식
청촌논총, 2011

237

Epitaxial germanium nanowires on GaAs grown by chemical vapor deposition
김용, 송만석, 김영대, 정재훈, Q. Gao, H. H. Tan, C. Jagadish
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007

238

Electrical and optical properties of nitrogen-incorporated silicon-oxide films by using plasma-enhanced chemical-vapor deposition with tetra methoxysilane/N2O/NH3 gas
김용, 정태훈, 정철진, 강명석
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006

239

Time resolved photoluminescence study on silicon nitride/silicon-rich-oxide superlattices grown by using ion-beam sputtering deposition
김용, 차규만, 강정현, 김영대, 이재열, 박홍준, 정태훈
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006

240

Selective formation of Si nanocrystals by assist ion beam irradiation
김용, 김재권, 차규만, 강정현, 김영대, 박홍준, 이재열, 정태훈
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004