발행물

전체 논문

248

211

Structure transition of crystalline Y2O3 film on Si(111) with substrate temperature
고대홍, 조만호
THIN SOLID FILMS, 1999

212

Interfacial reactions in the thin films Y2O3 on chemically oxidized (100) silicon substrate systems
황정남, 고대홍, 조만호
THIN SOLID FILMS, 1999

213

The Formation of Ti-polycide gate structure with high thermal stability using chemical-mechanical polishing(CMP) planarization technology
고대홍
IEEE Electronic Device Letters, 1999

214

Gate-Oxide integrity in Metal-Oxide-Semiconductor structures with Ti-polycide gates for ULSI applications
고대홍
Thin Solid Films Letter, 1999

215

Sputter seeding법을 이용한 CVD Cu박막의 비선택적 증착 및 기판의 영향
최두진, 고대홍
Journal of the Korean Ceramic Society, 1998

216

Characteristics of PECVD grown tungsten nitride films as diffusion-barrier layers for ULSI DRAM applications
Park, BL, 고대홍, Kim, YS, Ha, JM, Park, YW, Lee, SI, Lee, HD, Lee, MB, Chung, UI, Koh, Y, Lee, MY
JOURNAL OF ELECTRONIC MATERIALS, 1997

217

Nondestructive Depth Profile Measurement of a Co/Ti Bilayer Using Refracted x-ray Fluorescence
고대홍
EUROPEAN JOURNAL OF PAEDIATRIC NEUROLOGY, 1995

218

Characteristics of The NO Dielectric Film with LPCVD In-Situ Nitridation
고대홍
JOURNAL OF ELECTRONIC MATERIALS, 1994

219

In-Situ Dynamic High Resolution Transmission Electron Microscopy (HRTEM)of Interfacial Reactions in The Pt/GaAs Systems
고대홍
ULTRAMICROSCOPY, 1994

220

Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 degrees C
Byeon, DS, Choi, Y, Cho, C, Yoon, D, Lee, K, Baik, S, 고대홍
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 202104