발행물

전체 논문

116

61

Electrical properties of a W-B-N Schottky contact to GaAs
이창우
Appl. Phys. Lett., 1998

62

Negative resistance of AlGaAs diodes co-doped with Si and Mn
이창우
Jpn. J. Appl. Phys., 1997

63

Low contact resistance of n+ -Si/Ti/WNx/Al submicron contact structures
이창우
Appl. Phys. A, 1997

64

급속열처리와 엑시머 레이저에 의해 형성된 다결정 실리콘 박막에서 열처리 방법에 따른 박막의 특성변화
이창우
한국재료학회지, 1997

65

Effects of non-stoichiometric RuOx thin films on the dielectric properties of BaTiO₃ thin films
이창우
Applied Physics A, 1996

66

Advantages of RuOx bottom electrode in the dielectric and leakage characteristics of (Ba,Sr)TiO3 capacitor
이창우
Jpn. J. Appl. Phys., 1996

67

Improvement in the electrical properties of a (Ba,Sr)TiO3 capacitor by inserting a TiN layer between polycrystalline Si and Pt bottom electrodes
이창우
Phil. Mag. B, 1996

68

High temperature thermal stability of plasma deposited tungsten nitride schottky contact to GaAs.
이창우
Solid-State Electronics, 1995

69

Dielectric properties of PbTiO₃ thin film capacitors deposited on tungsten nitride/tungsten bilayers
이창우
Ferroelectrics, 1995

70

Comparison of high temperature thermal stabilities of Ru and RuO₂ schottky contacts to GaAs.
이창우
Applied Physics Letters, 1995