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116
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71
Substrate-dependent growth of polycrystalline silicon films prepared by plasma-enhanced chemical vapor deposition using SiF₄and H₂gases
이창우
Japanese Journal of Applied Physics, 1995
72
New method to improve thermal stability in the interface of silicon and tungsten by the interposition of plasma deposited tungsten nitride thin film
이창우
Applied Physics Letters, 1994
73
Performance of the plasma deposited tungsten nitride barrier layer to prevent the interdiffusion of Al and Si.
이창우
J. Vacuum Science and Technology, 1994
74
Stress relaxation in plasma deposited tungsten nitride/tungsten bilayer
이창우
Applied Physics Letters, 1994
75
Interface and electrical properties of plasma deposited tungsten and tungsten nitride schottky contacts to GaAs.
이창우
Journal of Applied Physics, 1994
76
TEM studies of plasma deposited tungsten and tungsten nitride barriers for thermally stable metallization
이창우
Mater. Res. Soc. Symp. Proc., 1994
77
Effects of Pt/W67N33 bottom electrode on dielectric properties of BaTiO₃ thin films
이창우
Mater. Res. Soc. Symp. Proc., 1994
78
플라즈마 화학증착된 텅스텐 질화막의 질소농도제어
이창우
새물리, 1994
79
Characteristics of plasma enhanced chemical vapor deposited tungsten nitride thin films
이창우
Applied Physics Letters, 1993
80
Fast solid-phase cry stallization of amorphous silicon films on glue using low-temperature multi-step rapid thermal annealing
이창우
Applied Physics A, 1993
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