발행물

전체 논문

116

71

Substrate-dependent growth of polycrystalline silicon films prepared by plasma-enhanced chemical vapor deposition using SiF₄and H₂gases
이창우
Japanese Journal of Applied Physics, 1995

72

New method to improve thermal stability in the interface of silicon and tungsten by the interposition of plasma deposited tungsten nitride thin film
이창우
Applied Physics Letters, 1994

73

Performance of the plasma deposited tungsten nitride barrier layer to prevent the interdiffusion of Al and Si.
이창우
J. Vacuum Science and Technology, 1994

74

Stress relaxation in plasma deposited tungsten nitride/tungsten bilayer
이창우
Applied Physics Letters, 1994

75

Interface and electrical properties of plasma deposited tungsten and tungsten nitride schottky contacts to GaAs.
이창우
Journal of Applied Physics, 1994

76

TEM studies of plasma deposited tungsten and tungsten nitride barriers for thermally stable metallization
이창우
Mater. Res. Soc. Symp. Proc., 1994

77

Effects of Pt/W67N33 bottom electrode on dielectric properties of BaTiO₃ thin films
이창우
Mater. Res. Soc. Symp. Proc., 1994

78

플라즈마 화학증착된 텅스텐 질화막의 질소농도제어
이창우
새물리, 1994

79

Characteristics of plasma enhanced chemical vapor deposited tungsten nitride thin films
이창우
Applied Physics Letters, 1993

80

Fast solid-phase cry stallization of amorphous silicon films on glue using low-temperature multi-step rapid thermal annealing
이창우
Applied Physics A, 1993