Suppression of Electrical Breakdown in Silicon Nitride Films Deposited by Catalytic Chemical Vapor Deposition at Temperatures Below 200oC
홍완식, 이경민
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 201101
32
Characteristics of bottom-gate low temperature nanocrystalline silicon thin film transistor fabricated by hydrogen annealing of gate dielectric layer
홍완식, 이경민, 이연진
THIN SOLID FILMS, 201008
33
Effect of In-situ Hydrogen Annealing on Dielectric Property of a Low Temperature Silicon Nitride Layer in a Bottom-Gate Nanocrystalline Silicon TFT by Catalytic CVD
홍완식
ECS Transactions, 201005
34
Electrical Properties of Silicon-Rich Silicon Carbide Films Prepared by Using Catalytic Chemical Vapor Deposition
홍완식
ECS Transactions, 201005
35
Optoelectronic Characteristics of HgSe Nanoparticle Films Spin-coated on Flexible Plastic Substrates
홍완식
Japanese Journal of Applied Physics, 201003
36
Fabrication of Nanocrystalline Silicon Gratings Embedded within a Silicon Nitride Matrix by Femtosecond Laser-Induced Crystallization
Lee, Y, Yoon, CS, Cheong, H, Kim, SS, 홍완식, Lee, KM, Lee, GJ
JAPANESE JOURNAL OF APPLIED PHYSICS, 201001
37
Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (<200oC)
홍완식, 이경민, 김태환, 황재담, 정기영, 한문섭, 원성환, 석중현, 박경완, 장승훈
Scripta Materialia, 200904
38
Nanocrystalline silicon films deposited with a modulated hydrogen dilution ratio by catalytic CVD at 200oC
홍완식, 김태환, 이경민, 황재담
CURRENT APPLIED PHYSICS, 200903
39
Memory characteristics of MOSFET with silicon nanoclusters formed using a pulse-type gas-feeding technique in the LPCVD system
홍완식, 박경완, 석중현, 원성환, 김은겸, 손대호, 김정호, 김경민
MICROELECTRONIC ENGINEERING, 200812
40
Formation of Nanocrystals Embedded in a Silicon Nitride Film at a Low Temperature (<200oC)