발행물

전체 논문

354

91

Tunnel field-effect transistor with segmented channel
Park, J., Shin, C.
IEEE Journal of the Electron Devices Society, 2019

92

Experimental understanding of polarization switching in PZT ferroelectric capacitor
Shin, C.
Semiconductor Science and Technology, 2019

93

Negative capacitance transistor with two‐dimensional channel material (Molybdenum disulfide, MoS2)
Choi, H., Shin, C.
physica status solidi (a), 2019

94

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits
Shim, J., woon Jang, S., Lim, J. H., Kim, H., Kang, D. H., Kim, K. H., Shin, C. H., ..., Park, J. H.
Nanoscale, 2019

95

Influence of high-pressure annealing on memory properties of Hf 0.5 Zr 0.5 O 2 based 1T-FeRAM
Yoon, J. S., Tewari, A., Shin, C., Jeon, S.
IEEE Electron Device Letters, 2019

96

Theoretical study of ferroelectric-gated nanoelectromechanical diode nonvolatile memory cell
Choe, K., Park, J., Shin, C.
Solid-State Electronics, 2020

97

Study of work-function variation in stacked multiple-channel-structure device
Park, J., Shin, C.
Semiconductor Science and Technology, 2019

98

Study of line edge roughness on various types of gate-all-around field effect transistor
Min, J., Shin, C.
Semiconductor Science and Technology, 2019

99

Device design guideline for junctionless gate-all-around nanowire negative-capacitance FET with HfO2-based ferroelectric gate stack
Choi, Y., Hong, Y., Shin, C.
Semiconductor Science and Technology, 2019

100

Time-resolved electrical characteristics of ferroelectric-gated fully depleted silicon on insulator devices
Yoon, C., Shin, C.
Solid-State Electronics, 2020