발행물

전체 논문

354

11

Impact of gate line-edge roughness (LER) versus random dopant fluctuations (RDF) on germanium-source tunnel FET performance
Damrongplasit, N., Kim, S. H., Shin, C., Liu, T. J. K.
IEEE transactions on nanotechnology, 2013

12

Study of High-$ k $/Metal-Gate Work Function Variation in FinFET: The Modified RGG Concept
Nam, H., Shin, C.
IEEE electron device letters, 2013

13

Analysis of random variations and variation-robust advanced device structures
Nam, H., Lee, G. S., Lee, H., Park, I. J., Shin, C.
JSTS: Journal of Semiconductor Technology and Science, 2014

14

Computing-Inexpensive Matrix Model for Estimating the Threshold Voltage Variation by Workfunction Variation in High-κ/Metal-gate MOSFETs
Lee, G. S., Shin, C.
JSTS: Journal of Semiconductor Technology and Science, 2014

15

State-of-the-art silicon device miniaturization technology and its challenges
Shin, C.
IEICE Electronics Express, 2014

16

Assistive circuit for lowering minimum operating voltage and balancing read/write margins in an SRAM array
Shin, C.
JSTS: Journal of Semiconductor Technology and Science, 2014

17

Impact of current flow shape in tapered (versus rectangular) FinFET on threshold voltage variation induced by work-function variation
Nam, H., Shin, C.
IEEE Transactions on Electron Devices, 2014

18

Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure
Kim, J. K., Kim, G. S., Shin, C., Park, J. H., Saraswat, K. C., Yu, H. Y.
IEEE electron device letters, 2014

19

Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application
Moon, D., Lee, H., Shin, C., Shin, H.
IEICE Electronics Express, 2014

20

Experimental demonstration of a ferroelectric FET using paper substrate
Shin, C., Lee, G. G., Han, D. H., Han, S. P., Tokumitsu, E., Ohmi, S. I., ..., Park, B. E.
IEICE Electronics Express, 2014