발행물

전체 논문

354

51

3-D quasi-atomistic model for line edge roughness in nonplanar MOSFETs
Oh, S., Shin, C.
IEEE Transactions on Electron Devices, 2016

52

Design for variation-immunity in sub-10-nm stacked-nanowire FETs to suppress LER-induced random variations
Park, J., Lee, H., Oh, S., Shin, C.
IEEE Transactions on Electron Devices, 2016

53

Vertical tunnel FET: Design optimization with triple metal-gate layers
Ko, E., Lee, H., Park, J. D., Shin, C.
IEEE Transactions on Electron Devices, 2016

54

Experimental evidence of negative quantum capacitance in topological insulator for sub-60-mV/decade steep switching device
Choi, H., Lee, H., Park, J., Yu, H. Y., Kim, T. G., Shin, C.
Applied Physics Letters, 2016

55

Effective Schottky barrier height lowering of metal/n-Ge with a TiO2/GeO2 interlayer stack
Kim, G. S., Kim, S. W., Kim, S. H., Park, J., Seo, Y., Cho, B. J., Shin, C., ..., Yu, H. Y.
ACS Applied Materials & Interfaces, 2016

56

Negative capacitance FinFET with sub-20-mV/decade subthreshold slope and minimal hysteresis of 0.48 V
Ko, E., Lee, J. W., Shin, C.
IEEE Electron Device Letters, 2017

57

Impact of source/drain metal work function on the electrical characteristics of anatase TiO2-based thin film transistors
Choi, H., Shin, J., Shin, C.
ECS Journal of Solid State Science and Technology, 2017

58

Experimental Observation of Negative Capacitance in Organic/Ferroelectric Capacitor for Steep Switching MOSFET
Lee, Y., Jo, J., Cho, K., Oh, S., Park, J. D., Shin, C.
Journal of Nanoscience and Nanotechnology, 2017

59

Transient response of negative capacitance in P (VDF 0.75-TrFE 0.25) organic ferroelectric capacitor
Ku, H., Shin, C.
IEEE Journal of the Electron Devices Society, 2017

60

Impact of equivalent oxide thickness on threshold voltage variation induced by work-function variation in multigate devices
Lee, Y., Shin, C.
IEEE Transactions on Electron Devices, 2017