발행물

전체 논문

354

21

Performance and variation-immunity benefits of segmented-channel MOSFETs (SegFETs) using HfO 2 or SiO 2 trench isolation
Nam, H., Park, S., Shin, C.
JSTS: Journal of Semiconductor Technology and Science, 2014

22

Specific contact resistivity reduction through Ar plasma-treated TiO 2− x interfacial layer to metal/Ge contact
Kim, G. S., Kim, J. K., Kim, S. H., Jo, J., Shin, C., Park, J. H., ..., Yu, H. Y.
IEEE Electron Device Letters, 2014

23

A new slit-type vacuum-channel transistor
Park, I. J., Jeon, S. G., Shin, C.
IEEE Transactions on electron devices, 2014

24

The efficacy of metal-interfacial layer-semiconductor source/drain structure on sub-10-nm n-type Ge FinFET performances
Kim, J. K., Kim, G. S., Nam, H., Shin, C., Park, J. H., Kim, J. K., ..., Yu, H. Y.
IEEE Electron Device Letters, 2014

25

Impact of temperature on negative capacitance field-effect transistor
Jo, J., Shin, C.
Electronics Letters, 2015

26

Symmetric tunnel field-effect transistor (S-TFET)
Nam, H., Cho, M. H., Shin, C.
Current Applied Physics, 2015

27

Experimental observation of voltage amplification using negative capacitance for sub-60 mV/decade CMOS devices
Jo, J., Shin, C.
Current Applied Physics, 2015

28

Effect of the Si/TiO2/BiVO4 heterojunction on the onset potential of photocurrents for solar water oxidation
Jung, H., Chae, S. Y., Shin, C., Min, B. K., Joo, O. S., Hwang, Y. J.
ACS Applied Materials & Interfaces, 2015

29

Highly scalable NAND flash memory cell design embracing backside charge storage
Kwon, W., Park, I. J., Shin, C.
JSTS: Journal of Semiconductor Technology and Science, 2015

30

Worst case sampling method with confidence ellipse for estimating the impact of random variation on static random access memory (SRAM)
Oh, S., Jo, J., Lee, H., Lee, G. S., Park, J. D., Shin, C.
JSTS: Journal of Semiconductor Technology and Science, 2015