발행물

전체 논문

354

41

Study of random variation in germanium-source vertical tunnel FET
Lee, H., Park, J. D., Shin, C.
IEEE Transactions on Electron Devices, 2016

42

Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method
Oh, S., Shin, C.
IEICE Transactions on Electronics, 2016

43

Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance
Cho, K., Jo, J., Shin, C.
IEICE Transactions on Electronics, 2016

44

Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure
Shin, C., Kim, J. K., Shin, C., Kim, J. K., Yu, H. Y.
Current Applied Physics, 2016

45

Atomic layer deposition of TiO 2 using titanium isopropoxide and H 2 O: operational principle of equipment and parameter setting
Cho, K., Park, J. D., Shin, C.
JSTS: Journal of Semiconductor Technology and Science, 2016

46

Effect of metal nitride on contact resistivity of metal-interlayer-Ge source/drain in sub-10-nm n-type Ge FinFET
Ahn, J., Kim, J. K., Kim, S. W., Kim, G. S., Shin, C., Kim, J. K., ..., Yu, H. Y.
IEEE Electron Device Letters, 2016

47

Effect of hydrogen annealing on contact resistance reduction of metal–interlayer–n-germanium source/drain structure
Kim, G. S., Yoo, G., Seo, Y., Kim, S. H., Cho, K., Cho, B. J., ..., Yu, H. Y.
IEEE Electron Device Letters, 2016

48

Study of Work-Function Variation in High-$\kappa $/Metal-Gate Gate-All-Around Nanowire MOSFET
Nam, H., Lee, Y., Park, J. D., Shin, C.
IEEE Transactions on Electron Devices, 2016

49

Random dopant fluctuation-induced threshold voltage variation-immune Ge FinFET with metal–interlayer–semiconductor source/drain
Shin, C., Kim, J. K., Kim, G. S., Lee, H., Shin, C., Kim, J. K., ..., Yu, H. Y.
ieee transactions on electron devices, 2016

50

Performance Booster for Vertical Tunnel Field-Effect Transistor: Field-Enhanced High-$\kappa $ Layer
Lee, H., Park, J. D., Shin, C.
IEEE Electron Device Letters, 2016