Random variation analysis and variation-aware design of symmetric tunnel field-effect transistor
Lee, H., Park, S., Lee, Y., Nam, H., Shin, C.
IEEE Transactions on Electron Devices, 2014
32
Worst case sampling method to estimate the impact of random variation on static random access memory
Lee, G. S., Shin, C.
IEEE Transactions on Electron Devices, 2014
33
Impact of the double-patterning technique on the LER-induced threshold voltage variation in symmetric tunnel field-effect transistor
Park, S., Lee, J. H., Shin, C.
IEICE Electronics Express, 2015
34
Study of work-function variation for high-$\kappa $/metal-gate Ge-Source tunnel field-effect transistors
Lee, Y., Nam, H., Park, J. D., Shin, C.
IEEE Transactions on Electron Devices, 2015
35
Negative capacitance in organic/ferroelectric capacitor to implement steep switching MOS devices
Jo, J., Choi, W. Y., Park, J. D., Shim, J. W., Yu, H. Y., Shin, C.
Nano letters, 2015
36
Surface passivation of germanium using SF 6 plasma to reduce source/drain contact resistance in germanium n-FET
Kim, G. S., Kim, S. H., Kim, J. K., Shin, C., Park, J. H., Saraswat, K. C., ..., Yu, H. Y.
IEEE Electron Device Letters, 2015
37
Fermi-level unpinning using a Ge-passivated metal–interlayer–semiconductor structure for non-alloyed ohmic contact of high-electron-mobility transistors
Kim, S. H., Kim, G. S., Kim, J. K., Park, J. H., Shin, C., Choi, C., Yu, H. Y.
IEEE Electron Device Letters, 2015
38
A compact effective-current model for power performance analysis on state-of-the-art technology development and benchmarking
Oh, S., Shin, C., Kwon, W.
Japanese Journal of Applied Physics, 2015
39
Negative capacitance field effect transistor with hysteresis-free sub-60-mV/decade switching
Jo, J., Shin, C.
IEEE Electron Device Letters, 2016
40
Impact of Trap Position on Random Telegraph Noise in a 70-Å Nanowire Field-Effect Transistor
Lee, H., Cho, K., Shin, C., Shin, H.
JSTS: Journal of Semiconductor Technology and Science, 2016