발행물
컨퍼런스
Korean Conference on Semiconductors
2012.02
,
Layer Selection by Multi Level Operation (LSM) of String Select Line in 3D Stacked NAND Flash Memory,
International Conference on Electronics, Information and Communication
Investigation of Poly Depletion Effect in 3D stacked NAND flash memory,
Variation of Threshold Voltage and ON Current Caused by Gate Length and Nanowire Diameter Fluctuation in Junctionless 3D NAND Flash Memory,
Erase Speed Enhancement by Using SiGe Drain in 3D Stacked NAND Flash Memory
Layer Selection by Multi Level Operation (LSM) of String Select Line in 3D Stacked NAND Flash Memory