발행물
컨퍼런스
대한전자공학회 추계학술대회
2011.11
,
3차원 적층 NAND 플래시 메모리의 설계 및 특성 분석
NANO Korea
2011.08
Variation of Threshold Voltage and ON Cell Current induced by Word Line Length Fluctuation with Technology Node Scaling in Virtual Source/Drain NAND Flash Memory,
Nano Korea
Variation of Threshold Voltage and ON Cell Current induced by Word Line Length Fluctuation with Technology Node Scaling in Virtual Source/Drain NAND Flash Memory
2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
2011.07
3-dimensional Terraced NAND (3D TNAND) Flash Memory
The 22nd International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC 2007)
Characterization of 2-bit Recessed Channel Memory with Lifted Charge Trapping Node Scheme