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167

91

Physics-Based SPICE-Compatible Compact Model of FLASH Memory With Poly-Si Channel for Computing-in-Memory Applications
Cho Jung Rae, Ryu Donghyun, Kim Donguk, Kim Wonjung, Kim Yeonwoo, Kim Changwook, 김윤, Kang Myounggon, Woo Jiyong, Kim Dae Hwan
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2025

92

Parylene-C-based flexible organic thin-film transistors and their reliability improvement using SU-8 passivation
박동욱, 박유정, 홍아현, 김윤, 서정화
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2024

93

Three-Dimensional Resistive Random-Access Memory Based on Stacked Double-Tip Silicon Nanowires for Neuromorphic Systems
김윤, 구민석, 이원주, 김보람
ACS Applied Electronic Materials, 2024

94

Recent advancements in implantable neural links based on organic synaptic transistors
Kim Y., Biswas S., Choi H., Jang H.-W., Zhu Y., Lee Y., Kim H.
Exploration, 2024

95

Synaptic Characteristics and Vector-Matrix Multiplication Operation in Highly Uniform and Cost-Effective Four-Layer Vertical RRAM Array
김윤, Jihyung Kim, Subaek Lee, Sungjoon Kim, Seyoung Yang, Jung-Kyu Lee, Tae-Hyeon Kim, Muhammad Ismail, Chandreswar Mahata, Woo Young Choi, Sungjun Kim
ADVANCED FUNCTIONAL MATERIALS, 2024

96

Design of a 180 nm CMOS Neuron Circuit with Soft-Reset and Underflow Allowing for Loss-Less Hardware Spiking Neural Networks
Jung Nam Kim, Kim Yoon, Kim Jaesung, Koo Minsuk, Hwang Sungmin
ADVANCED INTELLIGENT SYSTEMS, 2024

97

Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning
박준희, 김정남, Lee Seonhaeng, Kim Gang-Jun, Lee Namhyun, Baek Rock-Hyun, Kim Dae Hwan, Kim Changhyun, Kang Myounggon, 김윤
IEEE ACCESS, 2024

98

Design Strategies of 40 nm Split-Gate NOR Flash Memory Device for Low-Power Compute-in-Memory Applications
Wonbo Shim, 김윤, 김정남, Chan-Gi Yook
MICROMACHINES, 2023

99

Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor
DAE HWAN KIM, DONG MYONG KIM, JONG-HO BAE, SUNG-JIN CHOI, CHANGWOOK KIM, JUN TAE JANG, WONJUNG KIM, DONGYEON KANG, 김정남, 김윤
IEEE ACCESS, 2023

100

Fowler-Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications
김윤, Gang-Jun Kim, Dae Hwan Kim, Jong-Ho Bae, Changhyun Kim, Myounggon Kang, Namhyun Lee, 최현석, Jun Park, Changwook Kim, Jingyu Park, Sangwon Lee, Ga Won Yang, Sungju Choi
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023