발행물

전체 논문

167

61

Characterization of Oxide Trap Density with the Charge Pumping Technique in Dual-layer Gate Oxide
Yonghwan Son, Yoon Kim*, Myounggon Kang*
IEICE Electronics Express, 2017

62

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory
Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim, Byung-Gook Park*
Materials, 2017

63

Investigation of Capture and Emission Dependence between Individual Traps from Complex Random Telegraph Signal Noise Analysis
Yonghwan Son, Yoon Kim*, Myounggon Kang*
IEICE Electronics Express, 2017

64

Down-Coupling Phenomenon of Floating Channel in 3D NAND Flash Memory
Yoon Kim, Myounggon Kang*
IEEE Electron Device Letters, 2016

65

A Recessed-Channel Tunnel Field-Effect Transistor (RTFET) with the Asymmetric Source and Drain
Hui Tae Kwon, Sang Wan Kim, Won Joo Lee, Yoon Kim*
Journal of Semiconductor Technology and Science, 2016

66

Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region
Jongwook Jeon, Yoon Kim*, Myonggon Kang*
Semiconductor Science and Technology, 2016

67

Effects of Gate/Blocking oxide energy barrier on memory characteristics in charge trap flash memory cells
Dong Hua Li, Wandong Kim, Won Bo Shim, Se Hwan Park, Yoon Kim, Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Seongjae Cho, Byung-Gook Park*
Nanoscience and Nanotechnology Letters, 2015

68

Gated twin-bit silicon–oxide–nitride–oxide–silicon NAND flash memory for high-density nonvolatile memory
Yoon Kim, Won Bo Shim, Byung-Gook Park*
Japanese Journal of Applied Physics, 2015

69

Predictive Modeling of Channel Potential in 3-D NAND Flash Memory
Yoon Kim, Myounggon Kang*
IEEE Transactions on Electron Devices, 2014

70

A new programming method to alleviate the program speed variation in three-dimensional stacked array NAND flash memory
Yoon Kim, Joo Yun Seo, Sang-Ho Lee, Byung-Gook Park*
Journal of Semiconductor Technology and Science, 2014