발행물

전체 논문

167

21

Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors
Tae Jun Yang∇, Je-Hyuk Kim∇, Chang Il Ryoo, Seung Joo Myoung, Changwook Kim, Ju Heyuck Baeck, Jong-Uk Bae, Jiyong Noh, Seok-Woo Lee, Kwon-Shik Park, Jeom-Jae Kim, Soo-Young Yoon, Yoon Kim*, Dae Hwan Kim*
IEEE Transactions on Electron Devices, 2022

22

Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM
Jongmin Park, Tae-Hyeon Kim*, Osung Kwon, Muhammad Ismail, Chandreswar Mahata, Yoon Kim, Sangbum Kim, Sungjun Kim*
Nano Energy, 2022

23

Flexible Parylene C-Based RRAM Array for Neuromorphic Applications
JO-EUN KIM, BORAM KIM, HUI TAE KWON, JAESUNG KIM, KYUNGMIN KIM, DONG-WOOK PARK*, YOON KIM*
IEEE Access, 2022

24

Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET)
Seungwon Go, Shinhee Kim, Jae Yeon Park, Dong Keun Lee, Hyung Ju Noh, So Ra Park, Yoon Kim, Dae Hwan Kim, Sangwan Kim*
Solid State Electronics, 2022

25

NOR-Type 3-D Synapse Array Architecture Based on Charge-Trap Flash Memory
JUNG NAM KIM, JAE HONG LEE, JO EUN KIM, SUCK WON HONG, MINSUK KOO*, YOON KIM*
IEEE Journal of the Electron Devices Society, 2022

26

Effect of weight overlap region on neuromorphuc systems with memristive synaptic devices,
Geun Ho Lee, Tae-Hyeon Kim, Min Suk Song, Jin woo Park, Sung joon Kim, Kyung ho Hong, Yoon Kim, Byung-Gook Park*, Hyung jin Kim*
Chaos, Solitions and Fractals, 2022

27

Highly-packed self-assembled graphene oxide film-integrated resistive randomaccess memory on a silicon substrate for neuromorphic application
Hyun-Seok Choi, Jihye Lee, Boram Kim, Jaehong Lee, Byung-Gook Park, Yoon Kim*, Suck Won Hong*
Nanotechnology, 2022

28

Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection
Eunseon Yu, Amogh Agrawal, Dongqi Zheng, Mengwei Si, Minsuk Koo, D. Ye Peide, Sumeet Kumar Gupta, Kaushik Roy*
IEEE Electron Device Letters, 2021

29

Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system
S. Kwon, Y. Kim, M. Kang*, S. Kim*
Applied Surface Science, 2021

30

Resistive switching characteristics and theoretical simulation of a Pt/a- Ta2O5/TiN synaptic device for neuromorphic applications
U. Rasheed, H. Ryu, C. Mahata, R. A. Khalil, M. Imran, A, M. Rana, F. Kousar, B. Kim, Y. Kim, S. Cho, F. Hussain*, S. Kim*
Journal of Alloys and Compounds, 2021