발행물
컨퍼런스
2020 한국전기전자재료학회 하계학술대회
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Post Annealing Effect of Al Implantation on n-Type 4H-SiC
The 5th International Conference on Advanced Electromaterials
Crystallographic orientation dependent properties in 3C-SiC (111) and (100) Diode Structures
Photoconductive Ultraviolet Detector Based on AlN/SiC Structure
Comparison of Temperature Sensing Performance of 4H-SiC SBD, JBS and PiN Diode
Influence of Annealing Atmosphere on the Characterisitcs of Ga2O3/n Type 4H-SiC Heterojunction Diodes