발행물
컨퍼런스
ICSCRM 2019
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Fabrication and Properties of AlN/4H-SiC Schottky Barrier Diodes
Effect of Oxygen Annealing on the Characteristics of isotype n-Ga2o3/4H-SiC heterojunction diodes
2019 한국전기전자학회 하계학술대회
The effect of asymmetric trench-doping in 4H-SiC Trench MOSFET Structure
Properties of Ga2O3/n-SiC Heterojunction Diodes
O2 and CO2 Gas Sensors based on Ga2O3/4H-SiC Diode Structures