Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

Effects of H2 and N2 treatment for B2H6 dosing process on TiN surfaces during atomic layer deposition: an ab initio study

Uniformity control of the deposition rate profile of a-Si:H film by gas velocity and temperature distributions in a capacitively coupled plasma reactor

Numerical analysis of the incident ion energy and angle distribution in the DC magnetron sputtering for the variation of gas pressure

Advanced PIC-MCC simulation for the investigation of step-ionization effect in intermediate-pressure capacitively coupled plasmas

Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study

Effects of the wall boundary conditions of a showerhead plasma reactor on the uniformity control of RF plasma deposition

Analysis of intermediate pressure SiH4/He capacitively coupled plasma for deposition of an amorphous hydrogenated silicon film in consideration of thermal diffusion effects

Numerical analysis of the effect of electrode spacing on deposition rate profiles in a capacitively coupled plasma reactor

2D fluid model analysis for the effect of 3D gas flow on a capacitively coupled plasma deposition reactor