GIDL analysis of the process variation effect in gate-all-around nanowire FET

Analysis of metal gate work-function variation for vertical nanoplate FET in 6-T SRAMs

Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability

Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM

Analysis on extension region in nanowire FET considering RC delay and electrical characteristics

Analysis of parasitic capacitance and performance in gate-ail-around and tri-gate channel vertical FET

Improvement of dual-Λ spacer for nanowire-FETs considering circuit delay and electricstatic controllability

Comparison of parasitic components between LFET and VFET using 3D TCAD

Analysis of RC delay for high performance in LFET and VFET

Analysis of self-heating effects in vertical MOSFETs according to device geometry