발행물

논문
저서

전체 논문

233

191

Probability Level Dependence of Failure Mechanisms in Sub-20 nm NAND Flash Memory
Duckseoung Kang, Kyung-Hwan Lee, Myounggon Kang, Seongjun Seo, Dong Hua Li, Yuchul Hwang, Hyungcheol Shin
IEEE Electron Device Letters, 2014

192

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory
Kyunghwan Lee, Myounggon Kang, Seongjun Seo, Duckseoung Kang, Dong Hua Li, Yuchul Hwang, Hyungcheol Shin
IEEE Electron Device Letters, 2014

193

Three-Dimensional NAND Flash Memory Based on Single-Crystalline Channel Stacked Array
Yoon Kim, Myounggon Kang, Se Hwan Park, Byung‐Gook Park
IEEE Electron Device Letters, 2013

194

Activation Energies $(E_{a})$ of Failure Mechanisms in Advanced NAND Flash Cells for Different Generations and Cycling
Kyunghwan Lee, Myounggon Kang, Seongjun Seo, Duckseoung Kang, Shin Hyung Kim, Dong Hua Li, Hyungcheol Shin
IEEE Transactions on Electron Devices, 2013

195

Analysis of Failure Mechanisms and Extraction of Activation Energies $(E_{a})$ in 21-nm nand Flash Cells
Kyunghwan Lee, Myounggon Kang, Seongjun Seo, Dong Hua Li, Jungki Kim, Hyungcheol Shin
IEEE Electron Device Letters, 2012

196

Accurate Compact Modeling for Sub-20-nm nand Flash Cell Array Simulation Using the PSP Model
Jongwook Jeon, Il Han Park, Myounggon Kang, Wook-Ghee Hahn, Kihwan Choi, Sunghee Yun, Gi-Yong Yang, Keun‐Ho Lee, Young-Kwan Park, Chilhee Chung
IEEE Transactions on Electron Devices, 2012

197

New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory
Sung-Min Joe, Min-Kyu Jeong, Myounggon Kang, Kyoung-Rok Han, Sung-Kye Park, Jong‐Ho Lee
IEEE Electron Device Letters, 2012

198

An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm nand Flash Technologies
Myounggon Kang, Il Han Park, Ik‐Joon Chang, Kyung-Hwan Lee, Seongjun Seo, Byung‐Gook Park, Hyungcheol Shin
IEEE Electron Device Letters, 2012

199

The Compact Modeling of Channel Potential in Sub-30-nm NAND Flash Cell String
Myounggon Kang, Kyung-Hwan Lee, Dong Hyuk Chae, Byung‐Gook Park, Hyungcheol Shin
IEEE Electron Device Letters, 2012

200

A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications
C.-H. Jan, Uma Bhattacharya, R. Brain, S.-J. Choi, G. Curello, Garima Gupta, W. Hafez, M. Jang, Myounggon Kang, K. Komeyli, T. Leo, N. Nidhi, L. Pan, Jang Hyeok Park, K. Phoa, Anisur Rahman, Chad Staus, Hiroyuki Tashiro, C. Tsai, P. Vandervoorn, L. Yang, J.-Y. Yeh, Peng Bai
2012