발행물

논문
저서

전체 논문

233

181

Shot noise effect on noise source and noise parameter of 10-nm-scale quasi-ballistic n-/p-type MOS devices
Jongwook Jeon, Myounggon Kang
Japanese Journal of Applied Physics, 2016

182

Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region
Jongwook Jeon, Yoon Kim, Myounggon Kang
Semiconductor Science and Technology, 2016

183

Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback
Sung-Min Joe, Ho-Jung Kang, Nagyong Choi, Myounggon Kang, Byung‐Gook Park, Jong‐Ho Lee
IEEE Transactions on Electron Devices, 2016

184

Modelling by using multiphonon emission theory of data retention characteristics in charge trapping flash memory
Yongseok Son, Myounggon Kang
Electronics Letters, 2016

185

Studying Trapped Tunneling-Electron Migration Due to Program and Erase Cycles in NAND Flash
Myounggon Kang, Joon-Sung Yang, Ik‐Joon Chang
IEEE Electron Device Letters, 2016

186

Accurate Lifetime Estimation of Sub-20-nm NAND Flash Memory
Kyunghwan Lee, Myounggon Kang, Yuchul Hwang, Hyungcheol Shin
IEEE Transactions on Electron Devices, 2016

187

Fundamental trade-off between parasitic resistance and capacitance in a nanowire-FET technology
Hyungwoo Ko, Jongsu Kim, Myounggon Kang, Sunhom Steve Paak, Hyungcheol Shin
한국진공학회 학술발표회초록집, 2016

188

Modeling of apparent activation energy and lifetime estimation in NAND flash memory
Kyunghwan Lee, Myounggon Kang, Yuchul Hwang, Hyungcheol Shin
Semiconductor Science and Technology, 2015

189

High Quality Vertical Silicon Channel by Laser-Induced Epitaxial Growth for Nanoscale Memory Integration
Yong-Hoon Son, Seung Jae Baik, Myounggon Kang, Kihyun Hwang, Euijoon Yoon
JSTS Journal of Semiconductor Technology and Science, 2014

190

Predictive Modeling of Channel Potential in 3-D NAND Flash Memory
Yoon Kim, Myounggon Kang
IEEE Transactions on Electron Devices, 2014