Morphotropic Phase Boundary of Hf1-xZrxO2 Thin Films for Dynamic Random Access Memories
Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang
ACS Appl. Mater. Interfaces, 2018.11
112
Dispersion in ferroelectric switching performance of polycrystalline Hf0.5Zr0.5O2 thin films
Seung Dam Hyun, Hyeon Woo Park, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Young Jae Kwon, Taehwan Moon, Keum Do Kim, Yong Bin Lee, Beak Su Kim, Cheol Seong Hwang*
ACS Appl. Mater. Interfaces, 2018.09
113
La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors
Maxim G. Kozodaev, Anna G. Chernikova, Roman R. Khakimov, Min Hyuk Park, Cheol Seong Hwang, Andrey M. Markeev*
Appl. Phys. Lett., 2018.09
114
Review and perspective on ferroelectric HfO2-based thin films for memory applications
Min Hyuk Park, Young Hwan Lee, Thomas Mikolajick, Uwe Schroeder, Cheol Seong Hwang*
MRS Commun., 2018.08
115
Insights into Texture and Phase Coexistence in Polycrystalline and Polyphasic Ferroelectric HfO2 Thin Films using 4D-STEM
Everett D. Grimley, Sam Frisone, Tony Schenk, Min Hyuk Park, Chris M. Fancher, Thomas Mikolajick, Jacob L. Jones, Uwe Schroeder, James M. LeBeau
Micros. Microanal., 2018.08
116
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Thomas Mikolajick, Stefan Slesazeck, Min Hyuk Park, Uwe Schroeder
MRS Bull., 2018.05
117
Pyroelectricity of silicon-doped hafnium oxide thin films
Sven Jachalke, Tony Schenk, Min Hyuk Park, Uwe Schroeder, Thomas Mikolajick, Hartmut Stöcker, Erik Mehner, Dirk C Meyer
Appl. Phys. Lett., 2018.04
118
Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction
Min Hyuk Park, Ching‐Chang Chung, Tony Schenk, Claudia Richter, Karl Opsomer, Christophe Detavernier, Christoph Adelmann, Jacob L Jones, Thomas Mikolajick, Uwe Schroeder
Adv. Electron. Mater., 2018.05
119
Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2
Min Hyuk Park, Ching‐Chang Chung, Tony Schenk, Claudia Richter, Michael Hoffmann, Steffen Wirth, Jacob L Jones, Thomas Mikolajick, Uwe Schroeder
Adv. Electron. Mater., 2018.04
120
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, FPG Fengler, D Pohl, B Rellinghaus, C Zhou, CC Chung, JL Jones, T Mikolajick