발행물

전체 논문

291

141

Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure
Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Woojin Jeon, Taehwan Moon, Keum Do Kim, Doo Seok Jeong, Hiroyuki Yamada, Cheol Seong Hwang*
Sci. Rep., 2016.01

142

Interfacial charge induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bilayer
Yu Jin Kim, Min Hyuk Park, Woojin Jeon, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang*
J. Appl. Phys., 2015.12

143

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang*
Appl. Phys. Lett., 2015.11

144

Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong
An Quan Jiang, Xiang Jian Meng, David Wei Zhang, Min Hyuk Park, Sijung Yoo, Yu Jin Kim, James F. Scott*, Cheol Seong Hwang*
Sci. Rep., 2015.10

145

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Cheol Seong Hwang*
J. Mater. Chem. C, 2015.06

146

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-based Films
Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Johannes Müller, Alfred Kersch, Uwe Schroeder, Thomas Mikolajick, Cheol Seong Hwang*
Adv. Mater., 2015.03

147

Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1-xO2 films
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang*
Nano Energy, 2015.03

148

Thin HfxZr1-xO2 Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang*
Adv. Energy Mater., 2014.11

149

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer
Han Joon Kim, Min Hyuk Park, Yu Jin Kim, Young Hwan Lee, Woojin Jeon, Taehong Gwon, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang*
Appl. Phys. Lett., 2014.11

150

Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang*
Phys. Status Solidi RRL, 2014.10