발행물

전체 논문

354

111

Experimental study of interface traps in MOS capacitor with Al-doped HfO2
Seo, J., Shin, C.
Semiconductor Science and Technology, 2020

112

Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System
Yoon, C., Min, J., Shin, J., Shin, C.
IEEE Journal of the Electron Devices Society, 2020

113

Electrical Characteristics of Nanoelectromechanical Relay with Multi-Domain HfO2-Based Ferroelectric Materials
Yoon, C., Shin, C.
Electronics, 2020

114

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor
Yoon, C., Moon, S., Shin, C.
Nano Convergence, 2020

115

MFMIS negative capacitance FinFET design for improving drive current
Min, J., Shin, C.
Electronics, 2020

116

Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs
Min, J., Choe, G., Shin, C.
Current Applied Physics, 2020

117

Machine learning (ML)-based model to characterize the line edge roughness (LER)-induced random variation in FinFET
Lim, J., Shin, C.
IEEE Access, 2020

118

Electrical characteristics of bulk FinFET according to spacer length
Park, J., Kim, J., Showdhury, S., Shin, C., Rhee, H., Yeo, M. S., ..., Yi, J.
Electronics, 2020

119

Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si: HfO2-based ferroelectric capacitor
Jung, T., Shin, J., Shin, C.
Semiconductor Science and Technology, 2020

120

Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0. 5Zr0. 5O2 bilayer system
Das, D., Kim, T., Gaddam, V., Shin, C., Jeon, S.
Solid-State Electronics, 2020