발행물

전체 논문

354

151

GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET
Park, T., Kwak, J., Ahn, H., Lee, J., Lim, J., Yu, S., ..., Moon, T.
IEEE Access, 2022

152

Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor
Choi, Y., Shin, J., Moon, S., Min, J., Han, C., Shin, C.
Nanotechnology, 2023

153

Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors
Lee, S., Ronchi, N., Bizindavyi, J., Popovici, M. I., Banerjee, K., Walke, A., ..., Shin, C.
IEEE Transactions on Electron Devices, 2023

154

Impact of CF4/O2 Plasma Passivation on Endurance Performance of Zr-Doped HfO2 Ferroelectric Film
Choi, Y., Park, H., Han, C., Shin, C.
IEEE Electron Device Letters, 2023

155

Comparative study of novel u-shaped SOI FinFET against multiple-fin bulk/SOI FinFET
Son, M., Sung, J., Baac, H. W., Shin, C.
IEEE Access, 2023

156

Design for Variability: Counter-Doped Source/Drain Epitaxy Pockets in Gate-All-Around FET
Lim, J., Han. D., Baac, H. W., Shin, C.
IEEE Transactions on Electron Devices, 2023

157

Grain-size adjustment in Hf0.5Zr0.5O2 ferroelectric film to improve the switching time in  Hf0.5Zr0.5O2  -based ferroelectric capacitor
Yoon, J., Choi, Y., Shin, C.
Nanotechnology, 2024

158

Column Row Convolutional Neural Network: Reducing Parameters for Efficient Image Processing
Im, S., Jeong, J. S., Shin, C., Cho, J. H., Ju, H.
Neural Computation, 2024

159

Impact of the Crystal Structure of Interlayer on the Properties of Zr‐Doped Hafnia‐Based Ferroelectric Capacitor
Park, I., Choi, Y., Chin, C.
physica status solidi (a), 2024

160

First integration of Ni barrier layer for enhanced threshold switching characteristics in Ag/HfO2-based TS device
Chu, D., Kang, S., Kim, G., Sung, J., Lim, J., Choi, Y., Han, D., Chin, C.
Materials Today Advances, 2024