Row hammer-induced D0 failure improvement in sub-20 nm DRAM using an air gap

Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications

Sub-Boltzmann Switching, Hysteresis-Free Charge Modulated Negative Differential Resistance FinFET

First integration of Ni barrier layer for enhanced threshold switching characteristics in Ag/HfO2-based TS device

Self-Healing Magnetic Field-Assisted Threshold Switching Device Utilizing Dual Field-Driven Filamentary Physics

Column Row Convolutional Neural Network: Reducing Parameters for Efficient Image Processing

Grain-size adjustment in Hf0.5Zr0.5O2 ferroelectric film to improve the switching time in Hf0.5Zr0.5O2-based ferroelectric capacitor

Impact of the Crystal Structure of Interlayer on the Properties of Zr-Doped Hafnia-Based Ferroelectric Capacitor

Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET

Impact of CF4/O2 Plasma Passivation on Endurance Performance of Zr-Doped HfO2 Ferroelectric Film