발행물

전체 논문

354

121

Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
Kim, T., Shin, C.
Electronics, 2020

122

Recent studies on supercapacitors with next-generation structures
Sung, J., Shin, C.
Micromachines, 2020

123

Quantitative evaluation of process-induced line-edge roughness in FinFET: Bayesian regression model
Yu, S., Shin, C.
Semiconductor Science and Technology, 2021

124

Prediction model for random variation in FinFET induced by line-edge-roughness (LER)
Lee, J., Park, T., Ahn, H., Kwak, J., Moon, T., Shin, C.
Electronics, 2021

125

LER-induced random variation–immune effect of metal-interlayer–semiconductor source/drain structure on N-type Ge Junctionless FinFETs
Jung, S. G., Park, E., Shin, C., Yu, H. Y.
IEEE Transactions on Electron Devices, 2021

126

Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO₂/Al₂O₃-Multilayer-Based Threshold Switching Device
Han, S., Jeong, S., Shin, J., Shin, C.
IEEE Transactions on Electron Devices, 2021

127

FBFET (feedback field-effect transistor)-based oscillator for neuromorphic computing
Lee, C., Shin, C.
Semiconductor Science and Technology, 2021

128

Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor
Yu, H., Shin, C.
Electronics, 2021

129

Impact of Interface Layer on Device Characteristics of Si: HfO 2-Based FeFET’s
Jung, T., O’Sullivan, B. J., Ronchi, N., Linten, D., Shin, C., Van Houdt, J.
IEEE Transactions on Device and Materials Reliability, 2021

130

Experimental study of threshold voltage shift for Si: HfO2 based ferroelectric field effect transistor
Jung, T., Shin, C.
Nanotechnology, 2021