발행물

전체 논문

354

211

A Soft Pressure Sensor Array Based on a Conducting Nanomembrane
Jiyong Yoon, 강규민, 김우석, 박형원, 성두환, 손동희, 신미경, 신창환, 신창환, 안수정, 원상민, 정대광, 정현진
MICROMACHINES, 2021

212

Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
Barry O`Sullivan, Geert Van den Bosch, Jan Van Houdt, Kaustuv Banerjee, Nicolo Ronchi, Sean R. C. McMitchell, 민진홍, 신창환, 신창환
IEEE ELECTRON DEVICE LETTERS, 2021

213

Impact of Process-Induced Variations on Negative Capacitance Junctionless Nanowire FET
문승준, 신창환, 신창환, 이진웅, 임재혁, 최예주
ELECTRONICS, 2021

214

Abruptly-Switching MoS2-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO2-Based Threshold Switching Device
Deokjoon Eom, Gisu Youm, Ho-Jun Lee, Jinju Oh, Kyungin Ahn, Sangwoo Han, Seungjun Moon, Sojin Jeong, Yejoo Choi, 신창환, 신창환
IEEE ACCESS, 2021

215

Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate Device
박지원, 신창환, 신창환, 장완수
MICROMACHINES, 2021

216

Experimental study of threshold voltage shift for Si:HfO2 based ferroelectric field effect transistor
신창환, 신창환, 정태환
NANOTECHNOLOGY, 2021

217

Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET
신창환, 신창환, 이진웅, 임재혁
IEEE ACCESS, 2021

218

Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor
신창환, 신창환, 유한영
ELECTRONICS, 2021

219

Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET`s
Barry J. O`Sullivan, Dimitri Linten, Jan Van Houdt, Nicolo Ronchi, 신창환, 신창환, 정태환
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2021

220

Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO2/Al2O3-Multilayer-Based Threshold Switching Device
신재민, 신창환, 신창환, 정소진, 한상우
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021