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241
Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications
문승준, 신재민, 신창환, 신창환
ELECTRONICS, 2020
242
Understanding of Feedback Field-Effect Transistor and Its Applications
성주호, 신창환, 신창환, 이창훈
APPLIED SCIENCES-BASEL, 2020
243
Study on Various Device Structures for Steep-Switching Silicon-on-Insulator Feedback Field-Effect Transistors
신창환, 신창환, 이창훈
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020
244
Study of random dopant fluctuation in PNPN feedback FET
박재수, 신창환, 신창환
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020
245
NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity
신창환, 신창환, 최예주, 홍유리
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020
246
Time-resolved electrical characteristics of ferroelectric-gated fully depleted silicon on insulator devices
신창환, 신창환, 윤찬근
SOLID-STATE ELECTRONICS, 2020
247
Study of line edge roughness on various types of gate-all-around field effect transistor
민진홍, 신창환, 신창환
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020
248
Device design guideline for junctionless gate-all-around nanowire negative-capacitance FET with HfO2-based ferroelectric gate stack
신창환, 신창환, 최예주, 홍유리
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020
249
Theoretical study of ferroelectric-gated nanoelectromechanical diode nonvolatile memory cell
Kihun Choe, 박재수, 신창환, 신창환
SOLID-STATE ELECTRONICS, 2020
250
Study of work-function variation in stacked multiple-channel-structure device
박재수, 신창환, 신창환
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019
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