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전체 논문

354

271

Ferroelectric-Gated Nanoelectromechanical Nonvolatile Memory Cell
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019

272

Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-kappa/Metal Gate Work-Function Variation
신창환, 남효현, 박정동
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018

273

Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-k /Metal-Gate Work-Function Variation
남효현, 박정동, 신창환, 신창환
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018

274

Super steep-switching (SS approximate to 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O-3 threshold switching device
신창환, 이재우
APPLIED PHYSICS LETTERS, 2018

275

Super steep-switching (SS 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device
고은아, 김승근, 박준, 신재민, 신창환, 신창환, 유현용, 이재우
APPLIED PHYSICS LETTERS, 2018

276

Variation of Poly-Si Grain Structures under Thermal Annealing and its Effect on the Performance of TiN/Al2O3/Si3N4/SiO2/Poly-Si Capacitors
Tae Geun Kim, Young Woo Park, 신창환, Jun Hee Lim, Tae Ho Lee, Ju Hyun Park, Suk Bum Hong
APPLIED SURFACE SCIENCE, 2018

277

Analysis on the Operation of Negative Differential Resistance FinFET With Pb(Zr0.52Ti0.48)O-3 Threshold Selector
신창환, 고은아, 신재민
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018

278

Adjusting the Operating Voltage of an Nanoelectromechanical Relay Using Negative Capacitance
신창환, 최기훈
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017

279

Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film Transistor
신창환, 최현우, 이현재, 김민기, 조재성
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017

280

Impact of Interface Traps and Surface Roughness on the Device Performance of Stacked-Nanowire FETs
신창환, 박진영
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017