발행물

전체 논문

354

231

Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs
Gihun Choe, 민진홍, 신창환, 신창환
CURRENT APPLIED PHYSICS, 2020

232

Electrical Characteristics of Nanoelectromechanical Relay with Multi-Domain HfO2-Based Ferroelectric Materials
신창환, 신창환, 윤찬근
ELECTRONICS, 2020

233

Electrical Characteristics of Bulk FinFET According to Spacer Length
Hwasung Rhee, Jaemin Kim, Jinsu Park, Myung Soo Yeo, Sanchari Showdhury, 신창환, 신창환, 이준신, 조은철
ELECTRONICS, 2020

234

Experimental study of interface traps in MOS capacitor with Al-doped HfO2
서지호, 신창환, 신창환
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020

235

Device Design Guideline for HfO2-Based Ferroelectric-Gated Nanoelectromechanical System
민진홍, 신재민, 신창환, 신창환, 윤찬근
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020

236

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate
문승준, 신재민, 신창환, 신창환, 최예주
MICROMACHINES, 2020

237

Compact model for PZT ferroelectric capacitors with voltage dependent switching behavior
Bo-Han Qiu, Cheng Yan Chiu, Chien-Wei Wang, Darsen Lu, Hansol Ku, Sourav De, 신창환, 신창환
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020

238

Energy-Delay Sensitivity Analysis of a Nanoelectromechanical Relay With the Negative Capacitance of a Ferroelectric Capacitor
GIHUN CHOE, 신창환, 신창환, 윤찬근
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020

239

Optimization of double metal-gate InAs/Si heterojunction nanowire TFET
Eunah Ko, 신창환, 신창환, 최예주, 홍유리
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020

240

Device-design optimization of ferroelectric-gated vertical tunnel field-effect transistor to suppress ambipolar current
신창환, 신창환, 정태환
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020