Study of Metal Oxide Semiconductor Field Effect Transistor with Double-Layered Ferroelectric Capacitor
신창환, 신창환
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2019
254
Experimental understanding of polarization switching in PZT ferroelectric capacitor
신창환, 신창환
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019
255
Tunnel Field-Effect Transistor With Segmented Channel
박재수, 신창환, 신창환
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019
256
Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits
Dae-Hong Ko, Dong-Ho Kang, Hyeongjun Kim, Hyun-Yong Yu, Jaewoo Shim, Ji-Hye Lim, Keun Heo, Kwan-Ho Kim, Seunghwan Seo, Sung woon Jang, 박진홍, 신창환, 신창환, 이성주
NANOSCALE, 2019
257
Negative Capacitance Transistor with Two-Dimensional Channel Material (Molybdenum disulfide, MoS2)
Hyunwoo Choi, 신창환, 신창환
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019
258
Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM
Amit Tewari, Jae Seok Yoon, Sanghun Jeon, 신창환, 신창환
IEEE ELECTRON DEVICE LETTERS, 2019
259
DIBL improvement in hysteresis-free and ferroelectric-gated FinFETs
신재민, 신창환, 신창환
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019
260
Precise control of nanoscale spacing between electrodes using different natured self-assembled monolayers
Byeong-Kwon Ju, Do Young Kim, Hyeunseok Cheun, Jae Hak Lee, Jae Won Shim, Jae Woo Lee, Joon Yub Song, Sae Youn Lee, Yongjin Kim, Young-Jun You, 신창환, 신창환