발행물

전체 논문

354

221

FBFET (feedback field-effect transistor)-based oscillator for neuromorphic computing
신창환, 신창환, 이창훈
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021

222

Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER)
Hongjun Ahn, Jihwan Kwak, Jingwoong Lee, Taeeon Park, 문태섭, 신창환, 신창환
ELECTRONICS, 2021

223

LER-Induced Random Variation-Immune Effect of Metal-Interlayer-Semiconductor Source/Drain Structure on N-Type Ge Junction less FinFETs
Euyjin Park, Hyun-Yong Yu, Seung-Geun Jung, 신창환, 신창환
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021

224

Quantitative evaluation of process-induced line-edge roughness in FinFET: Bayesian regression model
신창환, 신창환, 유상호
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021

225

Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si:HfO2-based ferroelectric capacitor
Jung Taehwan, Shin Jaemin, Shin Changhwan, 정태환
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021

226

Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
김태건, 신창환, 신창환
ELECTRONICS, 2020

227

Recent Studies on Supercapacitors with Next-Generation Structures
성주호, 신창환, 신창환
MICROMACHINES, 2020

228

Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0.5Zr0.5O2 bilayer system
Dipjyoti Das, Sanghun Jeon, Taeho Kim, Venkateswarlu Gaddam, 신창환, 신창환
SOLID-STATE ELECTRONICS, 2020

229

Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET
신창환, 신창환, 임재혁
IEEE ACCESS, 2020

230

MFMIS Negative Capacitance FinFET Design for Improving Drive Current
민진홍, 신창환, 신창환
ELECTRONICS, 2020