2001Fully Differential CMOS TIA

TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.25 μm Anam CMOS & Telephus Multichip-on-Oxide ProcessTechnology5 mm x 5 mm0.13 mm x 0.16 mm250 μ m x 350 μ mTransimpedance amplifierN/A2.5 V27 mW @ 1 Gb/sAug. 2001

2001MPTC

TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.16 μm HynixCMOS DRAM Technology15.6 mm x 7.5 mmMultilevel Parallel Texture Cache150 MHz2.5 V89 mWMay. 2001

20014Gb/s CDR

TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.25 μm Dongbu CMOS Technology0.9 mm x 1.0 mm4-Gb/s Clock and Data Recovery(CDR)Circuit performing 1:4 DEMUX500 MHz2.5 V70 mWMay. 2001

20002Gb/s CDR

TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.25 μm Anam CMOS Technology1.0 mm x 2.0 mm2-Gb/s Clock and Data Recovery(CDR)Circuit performing 1:2 DEMUX1 GHz2.5 V100 mWDec. 2000

2000RamP-II

TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.18 μm Hynix CMOS EML Technology84 mm2One-Chip PDA Solution20/80/100 MHz1.8/2.5 V160 mWJul. 2000

20002.5Gb/s LVDS Transmitter

TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.25 μm Anam CMOS Technology2.0 mm x 2.0 mm2.5 Gb/s LVDS Transmitter for optical interconnectionsN/A2.5 V50 mWFeb. 2000

20001.3Gb/s LVDS Receiver

TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.25 μm Anam CMOS Technology2.0 mm x 2.0 mm1.3 Gb/s LVDS receiver for optical interconnectionsN/A2.5 V51 mWFeb. 2000

1999Ultra Fast 64bit Adder

TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.25 μm Anam CMOS Technology1.4 mm x 0.6 mmDynamic 64bit AdderN/A2.5 V100 mW @ 500 MHzDec. 1999

1999RamP-I

TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.35 μm Hynix CMOS DRAM Technology56 mm2EML 3D- Rendering Engine100 MHz3.3 V590 mWAug. 1999