2006RamP-VI
TechnologyAreaPower supplyFrequencyTransistorsProcessing speedPower managementPower consumptionFunctionsReleased Date0.18 μm TSMC 1-P 6-M CMOS TechnologyCore: 17.2mm2 , Die: 25mm2Core: 1.0V - 1.8V, I/O: 3.3V89MHz - 200MHz1.57Mtransistors, 29KB SRAM141Mvertices/s, 50Mpixels/sTriple power domains with DVFS52.4mW @ 60fpsOpenGL-ES 2.0Sep. 2006
2006Clearphone+
TechnologyAreaPower supplyFrequencyPower consumptionFunctionsReleased Date0.18 μm TSMC 1-P 6-M CMOS Technology3.74mm20.9V32kHz108 μWDigital hearing aid with ear modeling filterSep. 2006
2006μ-RamP
TechnologyAreaPower supplyFrequencyCapacityOperation ModeDate RatePower consumptionLatencyReleased Date90nm, diode-switch PRAM, 3-metal CMOS3,085μm x 1,940μm1.8V100MHz4Mb ( 256k x 16 bit )SM : Single access modeBM : Burst access modeSDM : Setup and debug modeRM : RISC Operation mode100Mb/s/pin read and write ( in BM )SM: 21.6mW BM: 28.4 mWSM…
2005Biocle, Clearphone
TechnologyChip SizeFunctionOperating FrequencyPower SupplyPower ConsumptionReleased Date0.18 μm DongbuAnam CMOS Technology5 mm x 5 mmBody-Coupled PHY Transceiver, Digital Hearing Aid160MHz, 32kHz0.9V, 0.9V2.6mW, 96μWDec. 2005
2005BioMAP
TechnologyChip SizeFunctionMemoryOperating FrequencyPower SupplyPower ConsumptionReleased Date0.18 μm DongbuAnam CMOS Technology5 mm x 5 mmBody Sensor Network management768 Kb SRAM4.2MHz for system bus, 8.192~32.768kHz for Sensor Management0.6 V core, 0.6 V-1.8 V peripheral24.2 μW avgDec. 2005
2005Logarithm Arithmetic Unit (LAU)
TechnologyChip SizeGate CountFunctionOperating FrequencyLatency/ThroughputPower SupplyPower ConsumptionReleased Date0.18 μm DongbuAnam CMOS Technology1 mm x 1 mm (core) / 4 mm x 4 mm (die, pad limited)9 KLogarithmic Arithmetic Unit213 MHz2-cycle/1-cycle1.8 V2.18 mW (1-operand) / 3.07 mW (2-operand)Mar. 2005
2005RamP-C2
TechnologyChip SizeGate CountFunctionClock FrequencyPixel Fill RatePower SupplyPower ConsumptionReleased Date0.18 μm DongbuAnam CMOS Technology5 mm x 5 mm330 KGate+164 Kb embedded SRAM- Gouraud Shading- Texture Mapping / Blending- Pixel Alpha Blending10 MHz20 Mpixels/s1.8 V (Core) / 3.3 V (I/O)< 17.2 mWMar. 2005
2005Body Channel Tester, RFID+Sensor, Bandgap Reference
TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.18 μm DongbuAnam CMOS Technology2 mm x 2 mm- Human Body Communication- Pixel Alpha Blending- RF Powered Sensors(Temperature and Photo Sensor)- 1MHz (Body Channel Communication)- 40KHz (RFID+Sensor)- N/A (Bandgap Reference)1 V/ 1.5-2.5 V / N/A250 μ W/ 5 μ W / N/A…
2004RamP-Lite
TechnologyChip SizeGate CountFunctionClock FrequencyPixel Fill RatePower SupplyPower ConsumptionPin PackageReleased DateSamsung 0.18 μm 1-poly 6-metal CMOS Technology5 mm x 5 mm (Core: 1.59 mm x 1.59 mm)181 K- Lighting- Triangle Setup- Gouraud Shading- Texture Mapping- Alpha Blending20 MHz20 Mpixels/s1.8 V (Core) / 3.3 V (I/O)14.7 mW208 pin QFPOct. 2004…
2004Preamplifier, PLL, Sigma-Delta Modulator
TechnologyChip SizeFunctionClock FrequencyPower SupplyPower ConsumptionReleased Date0.25 μm DongbuAnam CMOS Technology2 mm x 2 mm- Automatic Gain Control Preamplifier with Exponential Gain Control- PLL- Sigma-Delta ModulatorN/A (Preamplifier) / 2 GHz (PLL) / 1/2 MHz (Modulator)1.1 V / 2.0 V / 0.9 V40 μ WSep. 2004