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전체 논문

85

11

A study on the thermal budget of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors for next-generation memory applications
H. R. Park, J. G. Yoo, J. M. Kang, M. K. Cho, T. Gong, S. Park, S. Lee, J.-H. Kim‚ S. Lee, R. Choi, H. S. Kim, Y. C. Jung‚ J. Kim*, S. J. Kim*
in Proc. 7th IEEE Electron Devices Technology and Manufacturing, 2023

12

Furnace annealing effect on ferroelectric Hf0.5Zr0.5O2 thin films
M. K. Cho, J. G. Yoo, H. R. Park, J. M. Kang, T. Gong, Y. C. Jung, J. Kim, S. J. Kim*
Journal of the Korean Institute of Electrical and Electronic Material Engineers, 2023

13

Robust low-temperature (350°C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant
Y. C. Jung, J.-H. Kim, H. Hernandez-Arriaga, J. Mohan, S. M. Hwang, D. N. Le, A. Sahota, H. S. Kim, K. Kim, R. Choi, C.-Y. Nam, D. Alvarez, J. Spiegelman, S. J. Kim*, J. Kim*
Applied Physics Letters, 2022

14

Relaxation induced by imprint phenomena in low-temperature (400°C) processed Hf0.5Zr0.5O2‑based metal-ferroelectric-metal capacitors
J. Mohan, Y. C. Jung*, H. Hernandez-Arriaga, J.-H. Kim, T. Onaya, A. Sahota, S. M. Hwang, D. N. Le, J. Kim, S. J. Kim*
ACS Applied Electronic Materials, 2022

15

High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
S. M. Hwang, H. S. Kim, D. N. Le, A. Sahota, J. Lee, Y. C. Jung, S. W. Kim, S. J. Kim, R. Choi, J. Ahn, B. K. Hwang, X. Zhou, J. Kim
Journal of Vacuum Science & Technology A, 2022

16

Highly reliable selection behavior with controlled Ag doping of nano-polycrystalline ZnO layer for 3D X-point framework
A. Sahota, H. S. Kim, J. Mohan, Y. C. Jung, H. Hernandez-Arriaga, D. N. Le, S. J. Kim, J.-S. Lee, J. Ahn, J. Kim
IEEE Electron Device Letters, 2022

17

Low-thermal-budget (300°C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing
S. J. Kim*, Y. C. Jung, J. Mohan, H. J. Kim, S. M. Rho, M. S. Kim, J. G. Yoo, H. R. Park, H. Hernandez-Arriaga, J.-H. Kim, H. T. Kim, D. H. Choi, J. Jung, S. M. Hwang, H. S. Kim, H. J. Kim*, J. Kim*
Applied Physics Letters, 2021

18

Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors
A. Sahota, H. S. Kim, J. Mohan, D. N. Le, Y. C. Jung, S. J. Kim, J.-S. Lee, J. Ahn, H. Hernandez-Arriaga, J. Kim
AIP Advances, 2021

19

Extremely low leakage threshold switch with enhanced characteristics via Ag doping on polycrystalline ZnO fabricated by a facile electrochemical deposition for X-point selector
H. S. Kim, A. Sahota, J. Mohan, A. T. Lucero, Y. C. Jung, M. Kim, J.-S. Lee, R. Choi, S. J. Kim*, J. Kim*
ACS Applied Electronic Materials, 2021

20

A novel combinatorial approach to the ferroelectric properties in HfXZr1-XO2 deposited by atomic layer deposition
Y. C. Jung, J. Mohan, S. M. Hwang, J.-H. Kim, D. N. Le, A. Sahota, N. Kim, H. Hernandez-Arriaga, J.-F. Veyan, H. S. Kim, S. J. Kim, R. Choi, J. Kim
Physica Status Solidi-Rapid Research Letters, 2021