Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon
J. Mohan, H. Hernandez-Arriaga, Y. C. Jung, T. Onaya, C.-Y. Nam, E. H. R. Tsai, S. J. Kim*, J. Kim*
Applied Physics Letters, 2021
22
Plasma-enhanced atomic-layer deposition of nanometer-thick SiNx films using trichlorodisilane for etch-resistant coatings
S. M. Hwang, H. S. Kim, D. N. Le, A. V. Ravichandran, A. Sahota, J. Lee, Y. C. Jung, S. J. Kim, J. Ahn, B. K. Hwang, L. Lee, X. Zhou, J. Kim
ACS Applied Nano Materials, 2021
23
Low-thermal-budget fluorite-structure ferroelectrics for future electronic device applications
H. J. Kim, Y. An, Y. C. Jung, J. Mohan, J. G. Yoo, Y. I. Kim, H. Hernandez-Arriaga, H. S. Kim, J. Kim*, S. J. Kim*
Physica Status Solidi-Rapid Research Letters, 2021
24
High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor
H. S. Kim, S. M. Hwang, X. Meng, Y.-C. Byun, Y. C. Jung, A. V. Ravichandran, A. Sahota, S. J. Kim, J. Ahn, L. Lee, X. Zhou, B. K. Hwang, J. Kim
Journal of Materials Chemistry C, 2020
25
Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitridation source
Y. C. Jung, S. M. Hwang, D. N. Le, A. L. N. Kondusamy, J. Mohan, S. W. Kim, J. H. Kim, A. T. Lucero, A. Ravichandran, H. S. Kim, S. J. Kim, R. Choi, J. Ahn, D. Alvarez, J. Spiegelman, J. Kim
Materials, 2020
26
A comprehensive study on the effect of TiN top and bottom electrodes on atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films
S. J. Kim*, J. Mohan, H. S. Kim, S. M. Hwang, N. Kim, Y. C. Jung, A. Sahota, K. Kim, H.-Y. Yu, P.-R. Cha, C. D. Young, R. Choi, J. Ahn, J. Kim*
Materials, 2020
27
Ozone based high-temperature atomic layer deposition of SiO2 thin films
S. M. Hwang, Z. Qin, H. S. Kim, A. Ravichandran, Y. C. Jung, S. J. Kim*, J. Ahn, B. K. Hwang, J. Kim*
Y. J. Tak, S. T. Keene, B. H. Kang, W.-G. Kim, S. J. Kim, A. Salleo, H. J. Kim
ACS Applied Materials & Interfaces, 2020
29
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors
S. J. Kim, J. Mohan, H. S. Kim, J. Lee, S. M. Hwang, D. Narayan, J.-G. Lee, C. D. Young, L. Colombo, G. Goodman, A. S. Wan, P.-R. Cha, S. R. Summerfelt, T. San, J. Kim
Applied Physics Letters, 2019
30
Realization of spatially addressable library by a novel combinatorial approach on atomic layer deposition: a case study of zinc oxide
H. S. Kim, J. S. Lee, S. J. Kim, J. Lee, A. T. Lucero, M. M. Sung, J. Kim