Stress-induced crystallization of thin Hf1-XZrXO2 films: the origin of enhanced energy density with minimized energy loss for lead-free electrostatic energy storage applications
S. J. Kim, J. Mohan, J. S. Lee, H. S. Kim, J. Lee, C. D. Young, L. Colombo, S. R. Summerfelt, T. San, J. Kim
ACS Applied Materials & Interfaces, 2019
32
Ferroelectric thin Hf0.5Zr0.5O2 films: a review of recent advances
S. J. Kim, J. Mohan, S. R. Summerfelt, J. Kim
JOM, 2019
33
Investigation of the physical properties of plasma enhanced atomic layer deposited silicon nitride as etch stopper
H. S. Kim, X. Meng, S. J. Kim, A. T. Lucero, L. Cheng, Y.-C. Byun, J. S. Lee, S. M. Hwang, A. L. N. Kondusamy, R. M. Wallace, G. Goodman, A. S. Wan, M. Telgenhoff, B. K. Hwang, J. Kim
ACS Applied Materials & Interfaces, 2018
34
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
S. J. Kim, J. Mohan, H. S. Kim, J. Lee, C. D. Young, L. Colombo, S. R. Summerfelt, T. San, J. Kim
Applied Physics Letters, 2018
35
Ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications
S. J. Kim, J. Mohan, C. D. Young, L. Colombo, J. Kim, S. R. Summerfelt, T. San
in Proc. 10th IEEE International Memory Workshop, 2018
36
Robust SiNx/GaN MIS-HEMTs with crystalline interfacial layer using hollow cathode PEALD
X. Meng, J. Lee, A. V. Ravichandran, Y.-C. Byun, J.-G. Lee, A. T. Lucero, S. J. Kim, M.-W. Ha, C. D. Young, J. Kim
IEEE Electron Device Letters, 2018
37
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400°C) Hf0.5Zr0.5O2 films
S. J. Kim, J. Mohan, J. Lee, J. S. Lee, A. T. Lucero, C. D. Young, L. Colombo, S. R. Summerfelt, T. San, J. Kim
Applied Physics Letters, 2018
38
Boosting visible light absorption of metal-oxide-based phototransistors via heterogeneous In-Ga-Zn-O and CH3NH3PbI3 films
Y. J. Tak, D. J. Kim, W.-G. Kim, J. H. Lee, S. J. Kim, J. H. Kim, H. J. Kim
ACS Applied Materials & Interfaces, 2018
39
All-sputtered oxide thin-film transistors fabricated at 150°C using a simultaneous ultraviolet and thermal treatment
Y. J. Tak*, S. J. Kim*, S. Kwon, H. J. Kim, K.-B. Chung, H. J. Kim
Journal of Materials Chemistry C, 2018
40
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
S. J. Kim, D. Narayan, J.-G. Lee, J. Mohan, J. S. Lee, J. Lee, H. S. Kim, Y.-C. Byun, A. T. Lucero, C. D. Young, S. R. Summerfelt, T. San, L. Colombo, J. Kim