발행물
컨퍼런스
International Conference on the Physics of Semiconductors
2010.07
,
Charge Trapping and Memory Behaviors of the Ultra-thin SiN Layers,
Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices
A New Cone-Type 1T DRAM Cell,
Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect,
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect,
Charge Trapping and Memory Behaviors of the Ultra-thin SiN Layers