발행물
컨퍼런스
2nd International Conference on Memory Technology and Design
2010.05
,
Study of Programming Characteristics of 4-bit SONOS Flash Memory Using 3-Dimensional Transient Simulation
Korean Conference on Semiconductors
2010.02
Arch SONOS NAND Flash Memory Array with Improved Virtual Source and Drain Performance Due to the Field Concentration Effect,
Three Dimensional Stacked Bit-line NAND Flash Array and Inter-layer Interference,
VT decay mechanisms in SONOS flash memory retention mode including trapped charge redistribution effect,
Arch SONOS NAND Flash Memory Array with Improved Virtual Source and Drain Performance Due to the Field Concentration Effect