발행물
컨퍼런스
Korean Conference on Semiconductors
2010.02
,
Three Dimensional Stacked Bit-line NAND Flash Array and Inter-layer Interference
VT decay mechanisms in SONOS flash memory retention mode including trapped charge redistribution effect
IEEE International NanoElectronics Conference
2010
Comparative Analysis of Trap-based Program/Erase Behaviors with Tunnel Dielectric for SONOS Flash Memory,
Samsung-Corning Precision Materials Co., Ltd.
Flexible electronics: Interface control engineering and device physics
International Conference on Organic Electronics
Reduction mechanism of contact resistance in organic field-effect transistors by using Fluorine based Biphenyl SAMs(Self Assembled Monolayers) interlayer